SJMN11A70I Key Features
- Drain-Source voltage: VDS=750V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.33 (Typ.)
- Ultra low gate charge: Qg=23nC (Typ.)
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code -. WW : Week Code
- Part: SJMN11A70I
- Manufacturer: Kodenshi AUK Group
- Size: 329.71 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN11A60D | N-Channel Super Junction MOSFET |
| SJMN11S60I | N-Channel Super Junction MOSFET |
| SJMN190R65B | N-Channel Super Junction MOSFET |
| SJMN190R65F | N-Channel Super Junction MOSFET |
| SJMN190R65F | Ultrafast Recovery Power Rectifier |
SJMN11A70I Description
SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET.