SJMN11S60I Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)
- Low input capacitance and gate charge
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code
- WW : Week Code
- Part: SJMN11S60I
- Manufacturer: Kodenshi AUK Group
- Size: 538.72 KB
Related Kodenshi AUK Group Datasheets
| Part Number | Description |
|---|---|
| SJMN11A60D | N-Channel Super Junction MOSFET |
| SJMN11A70I | N-Channel Super Junction MOSFET |
| SJMN190R65B | N-Channel Super Junction MOSFET |
| SJMN190R65F | N-Channel Super Junction MOSFET |
| SJMN190R65F | Ultrafast Recovery Power Rectifier |
SJMN11S60I Description
SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET.