SJMN11S60I Overview
SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET.
SJMN11S60I Key Features
- Drain-Source voltage: VDS=650V (@TJ=150C)
- Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)
- Low input capacitance and gate charge
- RoHS pliant device
- 100% avalanche tested
- Y: Year Code
- WW : Week Code