SJMN90R1K2I
Key Features
- Drain-source breakdown voltage: BVDSS=900V
- Low gate charge device: Qg=13nC (Typ.)
- Low drain-source On-resistance: RDS(on)=1Ω (Typ.)
- Advanced trench process technology
- High avalanche energy, 100% test
- Part: SJMN90R1K2I
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Kodenshi AUK Group
- Size: 426.06 KB