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SJMN90R1K2I - N-Channel MOSFET

Features

  • Drain-source breakdown voltage: BVDSS=900V.
  • Low gate charge device: Qg=13nC (Typ. ).
  • Low drain-source On-resistance: RDS(on)=1Ω (Typ. ).
  • Advanced trench process technology.
  • High avalanche energy, 100% test Ordering Information Part Number Marking Package SJMN90R1K2I SJMN90R1K2 Marking Information I-PAK GDS I-PAK SJMN 90R1K2 YWW.
  • Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW.
  • -. YWW: Date Code (year, wee.

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Datasheet Details

Part number SJMN90R1K2I
Manufacturer KODENSHI KOREA
File Size 426.06 KB
Description N-Channel MOSFET
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SJMN90R1K2I N-Ch Trench MOSFET Power Switching Application Features • Drain-source breakdown voltage: BVDSS=900V • Low gate charge device: Qg=13nC (Typ.) • Low drain-source On-resistance: RDS(on)=1Ω (Typ.) • Advanced trench process technology • High avalanche energy, 100% test Ordering Information Part Number Marking Package SJMN90R1K2I SJMN90R1K2 Marking Information I-PAK GDS I-PAK SJMN 90R1K2 YWW□ Column 1, 2: Device Code Column 3: Production Information e.g.) YWW□ -. YWW: Date Code (year, week) -.
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