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SMK0160IS - Advanced N-Ch Power MOSFET

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KODENSHI KOREA

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SMK0160IS Advanced N-Ch Power MOSFET by KODENSHI KOREA - Datasheet Preview — Datasheet preview – SMK0160IS

Datasheet Details

Part number	SMK0160IS
Manufacturer	KODENSHI KOREA
File Size	482.23 KB
Description	Advanced N-Ch Power MOSFET
Datasheet	SMK0160IS Datasheet
Additional preview pages of the SMK0160IS datasheet.

Product details

Features

Drain-Source breakdown voltage: BVDSS=600V (Min. ).
Low gate charge: Qg=3.9nC (Typ. ).
Low drain-source On resistance: RDS(on)=11.5Ω (Max. ).
100% avalanche tested.
RoHS compliant device Ordering Information Part Number SMK0160IS Marking SMK0160 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0160 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=2.

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Published: Jan 24, 2017 |