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SMK0260IS - Advanced N-Ch Power MOSFET

Key Features

  • Drain-Source breakdown voltage: BVDSS=600V (Min. ).
  • Low gate charge: Qg=7nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=3.9Ω (Typ. ).
  • 100% avalanche tested.
  • RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0260 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C.

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SMK0260IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-Source breakdown voltage: BVDSS=600V (Min.) • Low gate charge: Qg=7nC (Typ.) • Low drain-source On resistance: RDS(on)=3.9Ω (Typ.) • 100% avalanche tested • RoHS compliant device Ordering Information Part Number SMK0260IS Marking SMK0260 Package I-PAK (Short Lead) GDS I-PAK Marking Information SMK 0260 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -.