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SMK0465IS - Advanced N-Ch Power MOSFET

Key Features

  • Drain-source breakdown voltage: BVDSS=650V.
  • Low gate charge: Qg=11.2nC (Typ. ).
  • Low drain-source On-resistance: RDS(on)=3Ω (Max. ).
  • RoHS compliant device.
  • Halogen free package Ordering Information Part Number Marking Package SMK0465IS SMK0465 I-PAK (Short lead) GDS I-PAK (Short Lead) Marking Information SMK 0465 YWW Column 1, 2: Device Code Column 3: Production Information e. g. ) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (T.

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SMK0465IS Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • Drain-source breakdown voltage: BVDSS=650V • Low gate charge: Qg=11.2nC (Typ.) • Low drain-source On-resistance: RDS(on)=3Ω (Max.) • RoHS compliant device • Halogen free package Ordering Information Part Number Marking Package SMK0465IS SMK0465 I-PAK (Short lead) GDS I-PAK (Short Lead) Marking Information SMK 0465 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -.