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SMK1080FD - Advanced N-Ch Power MOSFET

Key Features

  • Drain-Source breakdown voltage: BVDSS=800V.
  • Low gate charge: Qg=58nC (Typ. ).
  • Low drain-source On resistance: RDS(on)=1.1Ω (Max. ).
  • RoHS compliant device.
  • 100% avalanche tested Ordering Information Part Number Marking Package SMK1080FD SMK1080 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e. g. ) △YMDD -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Colu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMK1080FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features  Drain-Source breakdown voltage: BVDSS=800V  Low gate charge: Qg=58nC (Typ.)  Low drain-source On resistance: RDS(on)=1.1Ω (Max.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SMK1080FD SMK1080 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) △YMDD -. △: Factory Management Code -.