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STC5551F - NPN Silicon Transistor

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KODENSHI KOREA

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STC5551F NPN Silicon Transistor by KODENSHI KOREA - Datasheet Preview — Datasheet preview – STC5551F

Datasheet Details

Part number	STC5551F
Manufacturer	KODENSHI KOREA
File Size	338.44 KB
Description	NPN Silicon Transistor
Datasheet	STC5551F Datasheet
Additional preview pages of the STC5551F datasheet.

Product details

Description

General purpose amplifier High voltage application PIN Connection

Features

High collector breakdown voltage : VCBO = 180V, VCEO = 160V.
Low collector saturation voltage : VCE(sat)=0.5V(MAX. ) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51.
YWW.
: hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP.
PC PC.
TJ.

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Published: Oct 3, 2013 |