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STC5551F - NPN Silicon Transistor

General Description

General purpose amplifier High voltage application PIN Connection

Key Features

  • High collector breakdown voltage : VCBO = 180V, VCEO = 160V.
  • Low collector saturation voltage : VCE(sat)=0.5V(MAX. ) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51.
  • YWW.
  • : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP.
  • PC PC.
  • TJ.

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Datasheet Details

Part number STC5551F
Manufacturer KODENSHI KOREA
File Size 338.44 KB
Description NPN Silicon Transistor
Datasheet download datasheet STC5551F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STC5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application PIN Connection Features • High collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51 □YWW □ : hFE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP* PC PC** TJ Tstg Ratings 180 160 6 0.6 1.2 0.