SUF2001 - Dual N-and P-channel Trench MSFET

KODENSHI KOREA

Key Features

Low VGS(th): VGS(th)=1.0~3.0V.
Small footprint due to small package.
Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A) Ordering Information Part Number Marking Code Package SOP-8 SUF2001 SUF2001 SOP-8 Marking Information Column 1: Device Code Column 2: Production Information -. Y: Year Code -. WW: Week Code SUF2001 YWW Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

SUF2001 dual n-and p-channel trench msfet by KODENSHI KOREA - Datasheet Preview

Datasheet Details

Part number	SUF2001
Manufacturer	KODENSHI KOREA
File Size	569.31 KB
Description	Dual N-and P-channel Trench MSFET
Datasheet	SUF2001 Datasheet

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SUF2001 Dual N and P-channel Trench MOSFET 30V Dual N- and P-channel Trench MOSFET Features  Low VGS(th): VGS(th)=1.0~3.0V  Small footprint due to small package  Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A) Ordering Information Part Number Marking Code Package SOP-8 SUF2001 SUF2001 SOP-8 Marking Information Column 1: Device Code Column 2: Production Information -. Y: Year Code -.