Datasheet Summary
Dual N and P-channel Trench MOSFET
30V Dual N- and P-channel Trench MOSFET
Features
- Low VGS(th): VGS(th)=1.0~3.0V
- Small footprint due to small package
- Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A)
Ordering Information
Part Number Marking Code Package SOP-8
SOP-8
Marking Information
Column 1: Device Code Column 2: Production Information -. Y: Year Code -. WW: Week Code
SUF2001...