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KK4023B Datasheet PDF

Kodenshi AUK Group KK4023B

The KK4023B NAND gates provide the system designer with direct emplementation of the NAND function.
Part No. KK4023B
Datasheet KK4023B Download
Manufacturer
Kodenshi AUK Group
Description Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS
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KK4023B datasheet page 1 preview

MAXIMUM RATINGS

* Symbol VCC VIN VOUT IIN PD PD Tstg TL * Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) DC Output Voltage (Referenced to GND) DC Input Current, per Pin Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ Power Dissipation per Output Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260 Unit V V V mA mW mW °C °C

MAXIMUM RATINGS

are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) Operating Temperature, All Package Types Min 3.0 0 -55 Max 18 VCC +125 Unit V V °C This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
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