Kodenshi AUK Group SMK0460F
Advanced N-Channel Power MOSFET
APPLICATIONS
FEATURES
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● High Voltage : BVDSS=600V(Min.) Low Crss : Crss=9.8pF(Typ.) Low gate charge : Qg=12nC(Typ.) Low RDS(on) : RDS(on)=2.5Ω(Max.) G Package Code TO-220F-3L GD S TO-220F-3L PIN Connection D Ordering Information Type No. SMK0460F Marking SMK0460 S Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD ΔYMDD SMK0460 SDB20D45 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature ② ② ① ① * Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 600 ±30 4 2.53 16 30 4 225 4 10 150 -55~150 Unit V V A A A W A mJ A mJ °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max.