Kodenshi AUK Group SMK830P
Advanced N-Ch Power MOSFET
APPLICATIONS
FEATURES
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● High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) G Package Code TO-220AB G DS TO-220AB PIN Connection D Ordering Information Type No. SMK830P Marking SMK830 S Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK830 Column 2 : Production Information e.g.) GYMDD -. G : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Symbol VDSS VGSS ID TC=25C TC=100C IDM PD ② ② ① ① Rating 500 30 4.5 2.9 18 70 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A mJ A mJ C Drain current (Pulsed) Power dissipation * Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range IAS EAS IAR EAR TJ Tstg * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max.