SNN01Z10Q Datasheet | Kodenshi AUK Group

Features - Logic level gate drive - Max. RDS(ON) = 0.24Ω at VGS = 10V, ID = 0.5A - Low RDS(on) provides higher efficiency - ESD protected: 2000V (HBM: ±1000V) - Halogen free and Ro HS pliant device Ordering Information Part Number Marking Package SOT-223 G DS SOT-223 Marking Information SNN01Z10Q YWW Column 1: Device Code Column 2: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS Tc=25°C Tc=100°C Tstg - Limited only maximum junction temperature Rating 100 ±20 1 0.63 4 35 1 0.18 1.8...