STC4350Q - NPN Silicon Transistor

KODENSHI

Key Features

High collector breakdown voltage : VCEO = 50V.
Low collector saturation voltage : VCE(sat)= 0.35V(Max. ).
“Green” device and RoHS compliant device.
Available in full lead (Pb)-free device Ordering Information Type NO. STC4350Q Marking STC4350 STC4350Q NPN Silicon Transistor PIN Connection B C E C B SOT-223 C E Package Code SOT-223 Marking Diagram STC4350 YWW Column 1 : Device Code Column 2 : Production Information e. g. ) YWW -. Y : Year Code -. WW : Week Code KSD-.

STC4350Q npn silicon transistor by KODENSHI - Datasheet Preview

Datasheet Details

Part number	STC4350Q
Manufacturer	KODENSHI
File Size	322.11 KB
Description	NPN Silicon Transistor
Datasheet	STC4350Q Datasheet

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Applications  Power amplifier application  High current switching application Features  High collector breakdown voltage : VCEO = 50V  Low collector saturation voltage : VCE(sat)= 0.35V(Max.)  “Green” device and RoHS compliant device  Available in full lead (Pb)-free device Ordering Information Type NO. STC4350Q Marking STC4350 STC4350Q NPN Silicon Transistor PIN Connection B C E C B SOT-223 C E Package Code SOT-223 Marking Diagram STC4350 YWW Column 1 : Device Code Column 2 : Production Information e.g.) YWW -. Y : Year Code -.