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STC4350Q - NPN Silicon Transistor

Datasheet Summary

Features

  • High collector breakdown voltage : VCEO = 50V.
  • Low collector saturation voltage : VCE(sat)= 0.35V(Max. ).
  • “Green” device and RoHS compliant device.
  • Available in full lead (Pb)-free device Ordering Information Type NO. STC4350Q Marking STC4350 STC4350Q NPN Silicon Transistor PIN Connection B C E C B SOT-223 C E Package Code SOT-223 Marking Diagram STC4350 YWW Column 1 : Device Code Column 2 : Production Information e. g. ) YWW -. Y : Year Code -. WW : Week Code KSD-.

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Datasheet Details

Part number STC4350Q
Manufacturer KODENSHI
File Size 322.11 KB
Description NPN Silicon Transistor
Datasheet download datasheet STC4350Q Datasheet
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Full PDF Text Transcription

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Applications  Power amplifier application  High current switching application Features  High collector breakdown voltage : VCEO = 50V  Low collector saturation voltage : VCE(sat)= 0.35V(Max.)  “Green” device and RoHS compliant device  Available in full lead (Pb)-free device Ordering Information Type NO. STC4350Q Marking STC4350 STC4350Q NPN Silicon Transistor PIN Connection B C E C B SOT-223 C E Package Code SOT-223 Marking Diagram STC4350 YWW Column 1 : Device Code Column 2 : Production Information e.g.) YWW -. Y : Year Code -.
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