SMK0160IS
SMK0160IS is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-Source breakdown voltage: BVDSS=600V (Min.)
- Low gate charge: Qg=3.9n C (Typ.)
- Low drain-source On resistance: RDS(on)=11.5Ω (Max.)
- 100% avalanche tested
- Ro HS pliant device
Ordering Information
Part Number SMK0160IS
Marking SMK0160
Package
I-PAK (Short Lead)
I-PAK
Marking Information
SMK 0160
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
Tc=25°C Tc=100°C
Tstg
- Limited only maximum junction temperature
Rev....