SMK0170I
SMK0170I is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- -
- - High Voltage : BVDSS=700V(Min.) Low Crss : Crss=2.6p F(Typ.) Low gate charge : Qg=4.1n C(Typ.) Low RDS(ON) : RDS(ON)=15Ω(Max.)
PIN Connection
Ordering Information
Type No. SMK0170I Marking SMK0170 Package Code I-PAK
G GD S S I-PAK
Marking Diagram
Column 1 : Device Code
SMK0170 YWW
Column 2 : Production Information e.g.) YWW -. Y : Year Code -. WW : Week Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- Total Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
- Limited by maximum junction temperature
Symbol
VDSS VGSS ID (TC=25℃) (TC=100℃) IDP PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
700 30 1.0 0.63 4.0 28 1.0 17 1.0 0.5 150 -55~150
Unit
V V A A W A m J A m J C
Characteristic
Thermal resistance- Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
- Max.
4.46 62.5
Unit
℃/W
KSD-T6Q007-000
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test...