• Part: SMK0460I
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 372.56 KB
Download SMK0460I Datasheet PDF
Kodenshi AUK Group
SMK0460I
SMK0460I is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - - - - High Voltage: BVDSS=600V(Min.) Low Crss : Crss=9.8p F(Typ.) Low gate charge : Qg=12n C(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) Type No. SMK0460I Marking SMK0460 Package Code I-PAK GD S S I-PAK PIN Connection Ordering Information Marking Diagram SMK0460 YWW Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 30 4 2.53 16 48 4 225 4 10 150 -55~150 Unit V V A A A W A m J A m J C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 2.6 62.5 Unit ℃/W KSD-T6Q006-002 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=2.0A VDS=10V, ID=2.0A VGS=0V, VDS=25V,...