SMK0465IS
SMK0465IS is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-source breakdown voltage: BVDSS=650V
- Low gate charge: Qg=11.2n C (Typ.)
- Low drain-source On-resistance: RDS(on)=3Ω (Max.)
- Ro HS pliant device
- Halogen free package
Ordering Information
Part Number
Marking
Package
SMK0465
I-PAK (Short lead)
I-PAK (Short Lead)
Marking Information
SMK 0465 YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Single avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS VGSS ID Tc=25°C
Tc=100°C IDM IAR EAS IAR EAR PD TJ Tstg
- Limited only maximum...