SMK0825D
SMK0825D is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- High voltage: BVDSS=250V (Min.)
- Low gate charge: Qg=14.5n C (Typ.)
- Low drain-source On resistance: RDS(on)=0.43Ω (Max.)
- Ro HS pliant device
- Halogen free package
Ordering Information
Part Number SMK0825D Marking SMK0825 Package TO-252
TO-252
Marking Information
SMK 0825 YWW- Column 1, 2: Device Code Column 3: Production Information e.g.) YWW- -. YWW: Date Code (year, week) -.
- : Factory Code (‘A’: AUK, ‘S’: SP Semi.)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic Drain-source voltage Repetitive Avalanche Voltage (Note 1, 2) Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy Power dissipation Junction temperature Storage temperature range
- Limited only maximum junction temperature
(Note 1)
Symbol VDSS VDS(Avalanche) VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg
Rating 250 300 30 8 5.2 32 356 8 7.4 48 150 -55~150
Unit V V V A A A m J A m J W C C
Rev. date: 12-AUG-11
KSD-T6O031-001
.auk.co.kr
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Thermal Characteristics
Characteristic Thermal resistance, junction to case Thermal resistance, junction to ambient Symbol Rth(j-c) Rth(j-a) Rating Max. 2.6 Max. 50 Unit C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Internal gate resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time (Note 3,4) Rise time
(Note 3,4) (Note 3,4) (Note 3)
Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) RG gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition ID=250u A, VGS=0 ID=250u A, VDS=VGS VDS=250V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=4A f=1MHz, VDS=0V VDS=10V, ID=4A VDS=25V, VGS=0V, f=1MHz
Min. 250 2 11
Typ. 0.35 4 7 619 141 33 15 85 90 65 14.5 4 4.5
Max....