SMK0825FC
SMK0825FC is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- -
- - High Voltage : BVDSS=250V(Min.) Low Crss : Crss=33p F(Typ.) Low gate charge : Qg=14.5n C(Typ.) Low RDS(on) : RDS(on)=0.43Ω(Max.)
G Package Code TO-220F-3L (C Forming) GD S TO-220F-3L
PIN Connection
Ordering Information
Type No. SMK0825FC Marking SMK0825
Marking Diagram
Column 1 : Manufacturer
AUK AUK GYMDD YMDD Δ SMK0825 SDB20D45
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- Symbol
VDSS VGSS ID TC=25℃ TC=100℃ IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
250 30 8 5.2 32 29 8 356 8 7.4 150 -55~150
Unit
V V A A A W A m J A m J C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
- Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
- Max.
4.31 62.5
Unit
℃/W
KSD-T0O059-000
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs...