• Part: SMK0860P
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 426.59 KB
Download SMK0860P Datasheet PDF
Kodenshi AUK Group
SMK0860P
SMK0860P is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - High Voltage: BVDSS=600V(Min.) - Low Crss : Crss=9.7p F(Typ.) - Low gate charge : Qg=22n C(Typ.) - Low RDS(on) :RDS(on)=1.2Ω(Max.) PIN Connection Ordering Information Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.7 150 -55~150 Unit V V A A A W A m J A m J °C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 1.38 62.5 Unit ℃/W KSD-T0P024-000 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=3.75A VDS=10V, ID=3.75A VGS=0V, VDS=25V...