SMK0860P
SMK0860P is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- High Voltage: BVDSS=600V(Min.)
- Low Crss : Crss=9.7p F(Typ.)
- Low gate charge : Qg=22n C(Typ.)
- Low RDS(on) :RDS(on)=1.2Ω(Max.)
PIN Connection
Ordering Information
Type No. SMK0860P Marking SMK0860 Package Code TO-220AB-3L GDS TO-220AB-3L S
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
- Drain current (Pulsed)
- Symbol
VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg
Rating
600 ±30 7.5 4.7 30 90 7.5 325 7.5 21.7 150 -55~150
Unit
V V A A A W A m J A m J °C
Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
- Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-a)
Typ.
- Max
1.38 62.5
Unit
℃/W
KSD-T0P024-000
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④
Symbol
BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Test Condition
ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=3.75A VDS=10V, ID=3.75A VGS=0V, VDS=25V...