• Part: SMK1060P
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 427.87 KB
Download SMK1060P Datasheet PDF
Kodenshi AUK Group
SMK1060P
SMK1060P is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - High Voltage: BVDSS=600V(Min.) - Low Crss : Crss=18p F(Typ.) - Low gate charge : Qg=35nc(Typ.) - Low RDS(on) :RDS(on)=0.75Ω(Max.) PIN Connection Ordering Information Type No. SMK1060P Marking SMK1060 Package Code TO-220AB-3L GDS TO-220AB-3L S Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC)- Drain current (Pulsed)- Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 600 ±30 10 6.32 40 120 10 490 10 11.6 150 -55~150 Unit V V A A A W A m J A m J °C Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 1.04 62.5 Unit ℃/W KSD-T0P023-000 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250μA, VGS=0 ID=250μA, VDS= VGS VDS=600V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=5.0A VDS=10V, ID=5.0A VGS=0V, VDS=25V f=1MHz Min. 600 2.0 -...