SMK1080FD
SMK1080FD is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- Drain-Source breakdown voltage: BVDSS=800V
- Low gate charge: Qg=58n C (Typ.)
- Low drain-source On resistance: RDS(on)=1.1Ω (Max.)
- Ro HS pliant device
- 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1080
TO-220F-3L
TO-220F-3L
Marking Information
AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45
Column 1: Manufacturer Column 2: Production Information e.g.) △YMDD
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC)
- Drain current (Pulsed)
- Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
Tc=25C...