• Part: SMK1625D2
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 403.34 KB
Download SMK1625D2 Datasheet PDF
Kodenshi AUK Group
SMK1625D2
SMK1625D2 is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - - - - High Voltage : BVDSS=250V (Min.) Low Crss : Crss=49p F (Typ.) Low gate charge : Qg=22n C (Typ.) Low RDS(on) : RDS(on)=0.27Ω (Max.) PIN Connection Ordering Information Type No. SMK1625D2 Marking SMK1625 Package Code D2-PAK G S D2-PAK S Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK1625 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Symbol VDSS VGSS ID (TC=25C) (TC=100C) IDM PD     IAS EAS IAR EAR TJ Tstg Rating 250 30 16 7.2 64 130 16 480 16 13.9 150 -55~150 Unit V V A A A W A m J A m J C Drain current (Pulsed) - - Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) KSD-T6S006-000 Typ. - Max. 0.96 62.5 Unit C/W Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge - - Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs...