SMK630D Datasheet | Kodenshi AUK Group

Features - - - - High Voltage : BVDSS=200V(Min.) Low Crss : Crss=24p F(Typ.) Low gate charge : Qg=12n C(Typ.) Low RDS(on) : RDS(on)=0.4Ω(Max.) Ordering Information Type No. SMK630D Marking SMK630 Package Code TO-252 TO-252 Marking Diagram SMK 630 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature ② ② ① ① - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 200 30 9 5.7 36 45 9 232 9 9.5 150 -55~150 Unit V V A A A W A m J A m J C Characteristic Thermal resistance Junction-case Junction-ambient - - Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.77 50 Unit C/W - - When mounted on the minimum pad size remended (PCB Mount) KSD-T6O014-002 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs...