SMK730P
SMK730P is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features
- -
- - High Voltage : BVDSS=400V(Min.) Low Crss : Crss=14p F(Typ.) Low gate charge : Qg=16n C(Typ.) Low RDS(on) : RDS(on)=1.0Ω(Max.)
G Package Code TO-220AB GD S TO-220AB
PIN Connection
Ordering Information
Type No. SMK730P Marking SMK730
Marking Diagram
Column 1 : Manufacturer
AUK GYMDD SMK730
Column 2 : Production Information e.g.) GYMDD -. G : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Drain-source voltage Gate-source voltage Drain current (DC)
- Symbol
VDSS VGSS ID Tc=25C Tc=100C IDM PD
② ② ① ①
Rating
400 30 5.5 3.48 22 70 5.5 449 5.5 8.5 150 -55~150
Unit
V V A A A W A m J A m J C
Drain current (Pulsed) Power dissipation
- Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range
IAS EAS IAR EAR TJ Tstg
- Limited by maximum junction temperature
Characteristic
Thermal resistance Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
- Max.
1.78 62.5
Unit
C/W
KSD-T0P027-002
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④...