SMK830D Datasheet | Kodenshi AUK Group

Features - - - - High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33p F(Typ.) Low gate charge : Qg=16n C(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) PIN Connection D D G Package Code TO-252 G S S TO-252 Ordering Information Type No. SMK830D Marking SMK830 Marking Diagram SMK 830 YWW Column 1,2 : Device Code Column 3 : Production Information e.g.) YWW -. YWW : Date Code (year, week) Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature ② ② ① ① - Symbol VDSS VGSS ID (Tc=25℃) (Tc=100℃) IDM PD IAS EAS IAR EAR TJ Tstg Rating 500 ±30 4.5 2.9 18 48 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A m J A m J °C Characteristic Thermal resistance Junction-case Junction-ambient - - Symbol Rth(J-C) Rth(J-A) Typ. - Max. 2.6 50 Unit °C/W - - When mounted on the minimum pad size remended (PCB Mount) KSD-T6O010-001 Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250u A, VGS=0 ID=250u A, VDS=VGS VDS=500V, VGS=0V VDS=0V, VGS=±30V VGS=10V, ID=2.25A VDS=10V, ID=2.25A VGS=0V, VDS=25V,...