SMK830FZ Datasheet | Kodenshi AUK Group

Features - - - - High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33p F(Typ.) Low gate charge : Qg=16n C(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) G Package Code TO-220F-3L (Z Forming) GD S TO-220F-3L S PIN Connection Ordering Information Type No. SMK830FZ Marking SMK830 Marking Diagram Column 1 : Manufacturer AUK AUK GYMDD YMDD Δ SMK830 SDB20D45 Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Drain current (Pulsed) - Symbol VDSS VGSS ID TC=25℃ TC=100℃ IDM PD ② ② ① ① IAS EAS IAR EAR TJ Tstg Rating 500 30 4.5 2.8 18 30 4.5 472 4.5 5.0 150 -55~150 Unit V V A A A W A m J A m J C C Drain power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.16 62.5 Unit ℃/W KSD-T0O062-000 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④ ④ Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test...