• Part: SMK830P
  • Description: Advanced N-Ch Power MOSFET
  • Category: MOSFET
  • Manufacturer: Kodenshi AUK Group
  • Size: 396.04 KB
Download SMK830P Datasheet PDF
Kodenshi AUK Group
SMK830P
SMK830P is Advanced N-Ch Power MOSFET manufactured by Kodenshi AUK Group.
Features - - - - High Voltage : BVDSS=500V(Min.) Low Crss : Crss=33p F(Typ.) Low gate charge : Qg=16n C(Typ.) Low RDS(on) : RDS(on)=1.5Ω(Max.) G Package Code TO-220AB G DS TO-220AB PIN Connection Ordering Information Type No. SMK830P Marking SMK830 Marking Diagram Column 1 : Manufacturer AUK GYMDD SMK830 Column 2 : Production Information e.g.) GYMDD -. G : Factory Management Code -. YMDD : Date Code (Year, Month, Date) Column 3 : Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Drain-source voltage Gate-source voltage Drain current (DC) - Symbol VDSS VGSS ID TC=25C TC=100C IDM PD ② ② ① ① Rating 500 30 4.5 2.9 18 70 4.5 250 4.5 5.0 150 -55~150 Unit V V A A A W A m J A m J C Drain current (Pulsed) Power dissipation - Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range IAS EAS IAR EAR TJ Tstg - Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 1.78 62.5 Unit C/W KSD-T0P025-002 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ④...