Download STA3250D Datasheet PDF
Kodenshi AUK Group
STA3250D
STA3250D is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features - Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50m A - Large collector current capacity: IC=-2A - Small and pact SMD type package - “Green” device and Ro HS pliant device - Available in full lead (Pb)-free device TO-252 Ordering Information Type NO. STA3250D Marking STA3250- Package Code TO-252 - : Year & Week Code Absolute Maximum Ratings Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage [Ta=25℃] Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -2 -4 1 10 150 -55~150 Unit V V V A(DC) A(Pulse) W W °C °C Collector current ICP- PC(Ta= 25°C) Collector Power dissipation PC(TC= 25°C) Junction temperature Storage temperature range - : Single pulse, tp= 300 ㎲ TJ Tstg KSD-T6O023-001 Free Datasheet http://.n Datasheet.co Electrical Characteristics Characteristic Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current [Ta=25℃] Symbol BVCEO ICBO IEBO h FE Test Condition IC=-1m A, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A- VCE=-2V, IC=-1.5A- IC=-1A, IB=-0.05A- IC=-1A, IB=-0.05A- VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz Min. Typ. Max. -50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2 - Unit V μA μA DC current gain h FE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) f T Cob ton tstg tf < V V MHz p F n S - - : Pulse test : t P≤300µs, Duty cycle≤2% KSD-T6O023-001...