STA3250D
STA3250D is PNP Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- Low saturation voltage: VCE(sat)=-0.15V Typ. @ IC=-1A, IB=-50m A
- Large collector current capacity: IC=-2A
- Small and pact SMD type package
- “Green” device and Ro HS pliant device
- Available in full lead (Pb)-free device TO-252
Ordering Information
Type NO. STA3250D Marking STA3250- Package Code TO-252
- : Year & Week Code
Absolute Maximum Ratings
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage
[Ta=25℃] Symbol
VCBO VCEO VEBO IC
Rating
-50 -50 -5 -2 -4 1 10 150 -55~150
Unit
V V V A(DC) A(Pulse) W W °C °C
Collector current ICP- PC(Ta= 25°C) Collector Power dissipation PC(TC= 25°C) Junction temperature Storage temperature range
- : Single pulse, tp= 300 ㎲ TJ Tstg
KSD-T6O023-001
Free Datasheet http://.n Datasheet.co
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current
[Ta=25℃] Symbol
BVCEO ICBO IEBO h FE
Test Condition
IC=-1m A, IB=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A- VCE=-2V, IC=-1.5A- IC=-1A, IB=-0.05A- IC=-1A, IB=-0.05A- VCE=-2V, IC=-0.05A VCB=-10V, IE=0, f=1MHz
Min. Typ. Max.
-50 120 40 215 24 100 300 50 -0.1 -0.1 240 -0.35 -1.2
- Unit
V μA μA
DC current gain h FE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) f T Cob ton tstg tf
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V V MHz p F n S
- - : Pulse test : t P≤300µs, Duty cycle≤2%
KSD-T6O023-001...