STC5551F
STC5551F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features
- High collector breakdown voltage : VCBO = 180V, VCEO = 160V
- Low collector saturation voltage : VCE(sat)=0.5V(MAX.)
SOT-89
Ordering Information
Type No. STC5551F
N51: DEVICE CODE,
Marking N51
- YWW
- : h FE rank, YWW(Y
Package Code SOT-89
: Year code, WW : Weekly code)
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current
(Ta=25°C)
Symbol
VCBO VCEO VEBO IC ICP- PC PC-
- TJ Tstg
Ratings
180 160 6 0.6 1.2 0.5 1 150 -55~150
Unit
V V V A(DC) A(Pulse) W °C °C
Collector power dissipation Junction temperature Storage temperature
- : Single pulse, tp= 300 ㎲
- - : When mounted on ceramic substrate(250 ㎟×0.8t)
KSD-T5B012-003
Free Datasheet http://../
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25°C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO h FE
1) 2)
Test Condition
IC=100μA, IE=0 IC=1 ㎃, IB=0 IE=10 ㎂, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10 ㎃ IC=10 ㎃, IB=1 ㎃ IC=50 ㎃, IB=5 ㎃ IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=10V, IC=10 ㎃ VCB=10V, IE=0, f=1 ㎒
Min. Typ. Max.
180 160 6 80 100 6 0.1 0.1 250 0.2 0.5 1 1...