Download STC5551F Datasheet PDF
Kodenshi AUK Group
STC5551F
STC5551F is NPN Silicon Transistor manufactured by Kodenshi AUK Group.
Features - High collector breakdown voltage : VCBO = 180V, VCEO = 160V - Low collector saturation voltage : VCE(sat)=0.5V(MAX.) SOT-89 Ordering Information Type No. STC5551F N51: DEVICE CODE, Marking N51 - YWW - : h FE rank, YWW(Y Package Code SOT-89 : Year code, WW : Weekly code) Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current (Ta=25°C) Symbol VCBO VCEO VEBO IC ICP- PC PC- - TJ Tstg Ratings 180 160 6 0.6 1.2 0.5 1 150 -55~150 Unit V V V A(DC) A(Pulse) W °C °C Collector power dissipation Junction temperature Storage temperature - : Single pulse, tp= 300 ㎲ - - : When mounted on ceramic substrate(250 ㎟×0.8t) KSD-T5B012-003 Free Datasheet http://../ Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE 1) 2) Test Condition IC=100μA, IE=0 IC=1 ㎃, IB=0 IE=10 ㎂, IC=0 VCB=120V, IE=0 VEB=4V, IC=0 VCE=5V, IC=10 ㎃ IC=10 ㎃, IB=1 ㎃ IC=50 ㎃, IB=5 ㎃ IC=10m A, IB=1m A IC=50m A, IB=5m A VCE=10V, IC=10 ㎃ VCB=10V, IE=0, f=1 ㎒ Min. Typ. Max. 180 160 6 80 100 6 0.1 0.1 250 0.2 0.5 1 1...