SUF2001 Datasheet | Kodenshi AUK Group

Features - Low VGS(th): VGS(th)=1.0~3.0V - Small footprint due to small package - Low RGDS(on): N-ch, RDS(on)=24mΩ (@ VGS=10V, ID=2.9A) P-ch, RDS(on)=66mΩ (@ VGS=-10V, ID=-2.7A) Ordering Information Part Number Marking Code Package SOP-8 SOP-8 Marking Information Column 1: Device Code Column 2: Production Information -. Y: Year Code -. WW: Week Code SUF2001 YWW Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) - Total power dissipation - - Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range ① ① (TA=25C unless otherwise noted) Rating Symbol N-Ch VDSS VGSS ID IDP PD IAS EAS IAR EAR TJ Tstg Rth(J-A) 5.8 ② 72 ② Unit P-Ch -30 20 5.8 23.2 2 -5.3 ⑥ 33 ⑥ -5.3 -21.2 A A W A m J A m J C C/W 5.8 3.4 150 -55~150 62.5 -5.3 1.6 Thermal resistance junction to ambient - Limited by maximum junction temperature - - Device mounted on a glass-epoxy board Rev. date: 13-MAR-13 KSD-T7F002-001 .auk.co.kr 1 of 13 Free Datasheet http://../ N-channel MOSFET Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Drain-source on-resistance Forward transfer conductance ④ Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time ③④ Rise time ③④ Turn-off delay time ③④ Fall time ③④ Total gate charge ③④ Gate-source charge ③④ Gate-drain charge ③④ Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDS=15V, VGS=5V ID=5.8A VDS=15V, ID=5.8A RG=10Ω VGS=0V, VDS=10V, f=1MHz Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=30V, VGS=0V VDS=0V, VGS=20V VGS=10V, ID=2.9A VGS=5.0V, ID=2.9A VDS=5V, ID=5.8A Min. 30 1.0 Typ. 24 28 12 370 60 36 1.2 1.1 2.5 1.1 4.2 0.9 1.4 Max. 3.0 1 100 30 34 560 90 54 6.3 1.4 2.1 n C ns p...