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KPDE0301M51 - InGaAs Photodiode

Datasheet Summary

Features

  • NIR sensitive up to 1700nm.
  • Plastic mold package.
  • Various package option (Ceramic, Metal stem, TO-CAN).

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Datasheet Details

Part number KPDE0301M51
Manufacturer KYOSEMI
File Size 91.02 KB
Description InGaAs Photodiode
Datasheet download datasheet KPDE0301M51 Datasheet
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    InGaAs Photodiode Features • NIR sensitive up to 1700nm • Plastic mold package • Various package option (Ceramic, Metal stem, TO-CAN) Applications • Optical switches • Sensors and industrial controls KPDE0301M51 1. Cathode 2. Anode Unit: mm Absolute Maximum Ratings Parameter Reverse voltage Reverse current Forward current Operating temperature Storage temperature Symbol VR IR IF Topr Tstg Value 20 500 50 -20 to +80 -30 to +100 Unit Note V µA mA oC Avoid dew condensation oC Avoid dew condensation Electrical and Optical Characteristics (Ta=25oC unless otherwise noted) Parameter Active diameter Sensitive wavelength Responsivity Dark current Terminal capacitance Symbol D λ R ID Ct Min. 900 - Typ. φ0.3 1500 (λp) 0.9 4 Max.
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