1SS123
1SS123 is SILICON SWITCHING DIODE manufactured by Kexin Semiconductor.
Features
Low capacitance: Ct = 4.0 p F MAX High speed switching: trr = 9.0 ns MAX. Wide applications including switching,limitter,clipper. Double diode configuration assures economical use.
+0.1 2.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
0.95+0.1 -0.1 1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter Peak Reverse Voltage DC Reverse Voltage Peak Reverse Voltage Average Rectified Current DC Forward Current Junction Temperature Storage Temperature Range Junction to Ambient- Junction to Ambient
Symbol VRM VR IFM IO IF Tj Tstg
Rating 70 70 200 100 100 150
-55 to+ 150 1.0 0.67
Unit V V m A m A m A
/m W /m W
0-0.1 +0.1 0.38
-0.1
+0.1 1.3 -0.1
+0.1 0.97 -0.1
Unit: mm
0.1+0.05 -0.01
1.Base 2.Emitter 3.collector
Electrical Characteristics Ta = 25
Parameter
Continuous reverse voltage
Reverse current Capacitance Reverse recovery time Forward recovery voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
IF = 1.0 m...
