Kexin Electronics 2KK5001DS
N-Channel Enhancement MOSFET
| Part No. | 2KK5001DS |
|---|---|
| Datasheet | 2KK5001DS Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
VDS=20V ID=5.0A RDS(ON)=25m @VGS=4.5V,ID=5.0A RDS(ON)=35m @VGS=2.5V,ID=4.0A RDS(ON)=55m @VGS=1.8V,ID=1.0A +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain 0-0.1 +0.1 0.68 -0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Tj=125 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg Rating 20 ±10 5.0 15 1.25 100 150 -55 to 150 Unit V A W /W 1 SMD Type MOSFIECT 2KK5001DSELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage * Drain- Source on-state Resistance * Forward Transconductance * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off...
