Kexin Electronics 2KK5010E
N-Channel Enhancement MOSFET
| Part No. | 2KK5010E |
|---|---|
| Datasheet | 2KK5010E Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
ƽ VDS (V) = 20V ƽ ID = 6.5 A (VGS = 4.5V) ƽ RDS(ON) ˘ 22m¡ (VGS = 4.5V) ƽ RDS(ON) ˘ 26m¡ (VGS = 2.5V) D ƽ RDS(ON) ˘ 34m¡ (VGS = 1.8V) G S 627 3 1 2 1.6 8QLW PP *DWH 6RXUFH 'UDLQ ƵABSOLUTE MAXIMUM RATINGS
Ta = 25ć Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25ć Ta=70ć Pulsed Drain Current Power Dissipation Ta=25ć Ta=70ć Thermal Resistance.Junction- to-Ambient tİ10sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA RthJF TJ Tstg Rating 20 ±8 6.5 5.2 30 1.4 0.9 90 125 80 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type MOSFET N-Channel Enhancement MOSFET ƵELECTRICAL CHARACTERISTICS
Ta = 25ć 2KK5010E Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Current Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Re...
