Kexin Electronics 2KK5056
N-Channel MOSFET
FEATURES
● VDS (V) = 40 V● ID = 60 A
● RDS(ON) (at VGS = 10 V) < 8 mΩ
● RDS(ON) (at VGS = 4.5 V) < 10.5 mΩ TO-252 D G S MOSFET 23 1 1. Gate (G) 2. Drain (D) 3. Source (S)
●
ABSOLUTE MAXIMUM RATINGS
(TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current (Note 1) IDM Single Pulse Avalanche Energy (Note 2) EAS Peak Diode Recovery dv/dt (Note 3) dv/dt Power Dissipation PD Thermal Resistance, Junction- to-Ambient RθJA Thermal Resistance, Junction- to-Case RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VDD=25V,L=0.1mH, IAS=53.2A, RG=25Ω, Starting TJ = 25℃. 3. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25℃. Rating 40 ±20 60 200 142 7 40 110 3.125 150 -55 to 150 Unit V A mJ V/ns W ℃/W ℃ 1 SMD Type MOSFET N-Channel MOSFET 2KK5056●
ELECTRICAL CHARACTERISTICS
(TC = 25℃ unless othewise specified...