Kexin Electronics 2KK5066
Depletion-Mode Power MOSFET
FEATURES
ƽ BVDSX = 150 V ƽ IDSS = 200 mA ƽ RDS(ON) < 15 ƽ High-threshold voltage, its typical value as high as -6V ƽ ESD improved Capability ƽ Depletion Mode (Normally On) ƽ Proprietary Advanced Planar Technology ƽ Rugged Polysilicon Gate Cell Structure ƽ Fast Switching Speed +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68 -0.1 +0.2 1.6 -0.1 +0.2 1.1 -0.1 0.55 0.4 Unit : mm 0.15 +0.02 -0.02 1. Gate 2. Source 3. Drain ƵABSOLUTE MAXIMUM RATINGS
(TA=25ć unless otherwise specified) Parameter Symbol Drain-Source Voltage VDSX Drain-Gate Voltage VDGX Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current (Note 1) IDM Power Dissipation PD Thermal Resistance. Junction- to-Ambient RɽJA Junction Temperature TJ Storage Temperature Range Tstg Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Rating 150 150 ±20 0.2 0.6 0.5 250 150 -55 to 150 Unit V A W ć/W ć 1 SMD Type MOSFET Depletion-Mode Power M...