Kexin Electronics 2KK5075DFN
N-Channel MOSFET
| Part No. | 2KK5075DFN |
|---|---|
| Datasheet | 2KK5075DFN Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS = 30 V● ID (at VGS=10V) =36 A
● RDS(ON) (at VGS = 10 V) < 3.6 mΩ
● RDS(ON) (at VGS = 4.5 V) < 4.7 mΩ PDFN5x6-8 S D S D S D G D
●
ABSOLUTE MAXIMUM RATINGS
(TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±20 Continuous Drain Current (Note 1) TC = 25℃ ID 36 A Pulsed Drain Current (Note 2) IDM 144 Single Pulse Avalanche Current (Note 2) IAS 40 A Single Pulse Avalanche Energy L = 0.1mH (Note 2) EAS 80 mJ Thermal Resistance, Junction- to-Ambient (Note3, 4) Thermal Resistance, Junction- to-Case RθJA 55 RθJC 2.5 ℃/W Power Dissipation (Note 4) Power Dissipation (Note 5) TC = 25℃ 50 PD TC = 100℃ 20 W TA = 25℃ 6.2 PDSM TA = 70℃ 4 Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: 1. The maximum current rating is package limited. 2. Single pulse width limited by junction temperature TJ(MAX)=150°C. 3. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
