Kexin Electronics 2KK5098DFN
N-Channel MOSFET
FEATURES
● VDS (V) = 80 V● ID = 23 A
● RDS(ON) (at VGS = 10 V) < 34 mΩ PDFN5x6-8 S D S D S D G D
●
ABSOLUTE MAXIMUM RATINGS
(Tj = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance.Junction- to-Ambient (Note 3) RθJA Thermal Resistance.Junction- to-Case (Note 3) RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : ID=12A, Rg=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec. Rating 80 ±20 23 15 92 32 20 50 3.9 150 -55 to 150 Unit V A W mJ ℃/W ℃/W ℃ 1 SMD Type N-Channel MOSFET 2KK5098DFN●
ELECTRICAL CHARACTERISTICS
(TC = 25℃ unless othewise specified) Parameter Symbol Test Conditions Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to So...