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2KK5098DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 80 V.
  • ID = 23 A.
  • RDS(ON) (at VGS = 10 V) < 34 mΩ PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (Tj = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance. Junction- to-Ambient (Note 3) RθJA Thermal Resistance. Junction- to-Case (.

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SMD Type MOSFET N-Channel MOSFET 2KK5098DFN ■ Features ● VDS (V) = 80 V ● ID = 23 A ● RDS(ON) (at VGS = 10 V) < 34 mΩ PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (Tj = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25℃ Continuous Drain Current ID TC = 100℃ Pulsed Drain Current (Note 1) IDM Power Dissipation PD Single Pulse Avalanche Energy (Note 2) EAS Thermal Resistance.Junction- to-Ambient (Note 3) RθJA Thermal Resistance.Junction- to-Case (Note 3) RθJC Junction Temperature TJ Storage Temperature Range Tstg Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition : ID=12A, Rg=25Ω 3. Surface Mounted on FR4 Board, t ≤ 10 sec.