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2KK5125DFN - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 60 V.
  • ID = 80 A.
  • RDS(ON) (at VGS = 10 V) < 6 mΩ.
  • RDS(ON) (at VGS = 4.5 V) < 11 mΩ PDFN5x6-8 S D S D S D G D.
  • Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ±20 Continuous Drain Current A TC = 25℃ TC = 100℃ Pulsed Drain Current B Single Pulse Avalanche Energy C Power Dissipation D Thermal Resistance, Junction- to-Ambient E Thermal Resistan.

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SMD Type N-Channel MOSFET 2KK5125DFN MOSFET ■ Features ● VDS (V) = 60 V ● ID = 80 A ● RDS(ON) (at VGS = 10 V) < 6 mΩ ● RDS(ON) (at VGS = 4.5 V) < 11 mΩ PDFN5x6-8 S D S D S D G D ■ Absolute Maximum Ratings (TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ±20 Continuous Drain Current A TC = 25℃ TC = 100℃ Pulsed Drain Current B Single Pulse Avalanche Energy C Power Dissipation D Thermal Resistance, Junction- to-Ambient E Thermal Resistance, Junction- to-Case ID IDM EAS PD RθJA RθJC 80 50 300 500 120 20 1.04 A mJ W ℃/W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: A. The maximum current rating is package limited. B.