Kexin Electronics 2KK5125DFN
N-Channel MOSFET
| Part No. | 2KK5125DFN |
|---|---|
| Datasheet | 2KK5125DFN Download |
| Manufacturer | Kexin Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● VDS (V) = 60 V● ID = 80 A
● RDS(ON) (at VGS = 10 V) < 6 mΩ
● RDS(ON) (at VGS = 4.5 V) < 11 mΩ PDFN5x6-8 S D S D S D G D
●
ABSOLUTE MAXIMUM RATINGS
(TA = 25℃ unless otherwise noted) Parameter Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ±20 Continuous Drain Current A TC = 25℃ TC = 100℃ Pulsed Drain Current B Single Pulse Avalanche Energy C Power Dissipation D Thermal Resistance, Junction- to-Ambient E Thermal Resistance, Junction- to-Case ID IDM EAS PD RθJA RθJC 80 50 300 500 120 20 1.04 A mJ W ℃/W Junction Temperature Storage Temperature Range TJ 150 ℃ Tstg -55 to 150 Notes: A. The maximum current rating is package limited. B. Repetitive rating; pulse width limited by max. junction temperature. C. VDD=50 V, RG=25 Ω, L=0.5mH, starting Tj=25 ℃. D. PD is based on max. junction temperature, using junction-case thermal resistance. E.The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with Ta=25 ℃.
