Download 2PA1576 Datasheet PDF
Kexin Semiconductor
2PA1576
2PA1576 is PNP General Purpose Transistor manufactured by Kexin Semiconductor.
Features Low current (max. 100 m A) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 p F). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -50 -40 -5 -100 -200 -200 200 -65 to +150 150 -65 to +150 625 Unit V V V m A m A m A m W K/W 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PA1576Q 2PA1576R 2PA1576S Collector-emitter saturation voltage Collector capacitance Transition frequency - Pulse test: tp 300 ìs; ä 0.02. Symbol Testconditons ICBO IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150 IEBO IC = 0; VEB = -4 V Min Typ Max Unit -100 n A -5 ìA -100 n A h FE IC = -1 m A; VCE = -6 V VCE(sat) IC = -50 m A; IB = -5 m A; - Cc IE = ie = 0; VCB = -12 V; f = 1 MHz f T IC = -2 m A; VCE = -12 V; f = 100 MHz -500 m V 2.5 3.5 p F MHz h FE Classification TYPE Marking 2PA1576Q FQ 2PA1576R FR 2PA1576S FS .kexin..cn...