2PA1576
2PA1576 is PNP General Purpose Transistor manufactured by Kexin Semiconductor.
Features
Low current (max. 100 m A) Low voltage (max. 40 V). Low collector capacitance (typ. 2.5 p F).
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature thermal resistance from junction to ambient
Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a
Rating -50 -40 -5 -100 -200 -200 200
-65 to +150 150
-65 to +150 625
Unit V V V m A m A m A m W
K/W
1 Emitter 2 Base 3 Collector
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current DC current gain 2PA1576Q 2PA1576R 2PA1576S Collector-emitter saturation voltage Collector capacitance Transition frequency
- Pulse test: tp 300 ìs; ä 0.02.
Symbol
Testconditons
ICBO
IE = 0; VCB = -30 V IE = 0; VCB = -30 V; Tj = 150
IEBO IC = 0; VEB = -4 V
Min Typ Max Unit -100 n A -5 ìA -100 n A h FE IC = -1 m A; VCE = -6 V
VCE(sat) IC = -50 m A; IB = -5 m A;
- Cc IE = ie = 0; VCB = -12 V; f = 1 MHz f T IC = -2 m A; VCE = -12 V; f = 100 MHz
-500 m V
2.5 3.5 p F
MHz h FE Classification
TYPE Marking
2PA1576Q FQ
2PA1576R FR
2PA1576S FS
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