Kexin Electronics 2PB709A
PNP General Purpose Transistor
FEATURES
Low current (max. 100 mA) Low voltage (max. 45 V). +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1ABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation(Tamb 25 ; *) Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * Transistor mounted on an FR4 PCB. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating -45 -45 -6 -100 -200 -100 250 -65 to +150 150 -65 to +150 500 Unit V V V mA mA mA mW K/W 0-0.1 +0.1 0.38 -0.1 +0.1 1.3 -0.1 +0.1 0.97 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector 1 SMD Type TransistIoCrs 2PB709AELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain 2PB709AQ 2PB709AR 2PB709AS Collector-emitter saturation voltage Collector capacitance Transition frequency 2PB709AQ 2PB709AR 2PB709AS * Pulse test: tp 300 ìs; ä 0.02.