Kexin Electronics 2SA1226
PNP Transistors
FEATURES
● Collector Current Capability IC=-30mA● Collector Emitter Voltage VCEO=-40V +0.1 2.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.1 0.97 -0.1
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol Rating Unit VCBO -40 VCEO -40 V VEBO -5 IC -30 mA PC 200 mW TJ 150 ℃ Tstg -55 to 150 0-0.1 +0.1 0.38 -0.1 1.Base 2.Emitter 3.collector●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Symbol Test Conditions VCBO Ic= -100 μA, IE=0 VCEO Ic= -1 mA, IB=0 VEBO IE= -10...