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2SA1385-Z - PNP Transistor

Key Features

  • Low VCE(sat):VCE(sat)=-0.18 V TYP. +0.2 9.70 -0.2 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse.
  • Total power dissipation Junction temperature Storage temperature.
  • PW 10ms, duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT.

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SMD Type Silicon PNP Epitaxia 2SA1385-Z Transistors TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features Low VCE(sat):VCE(sat)=-0.18 V TYP. +0.2 9.70 -0.2 +0.15 5.55 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current pulse * Total power dissipation Junction temperature Storage temperature * PW 10ms, duty cycle 50%.