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2SA1461 - Transistor

Key Features

  • High speed switching: tstg=110ns. High gain bandwidth product: fT=510MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating -40 -40 -5 -200 200 Unit V V V mA mW Maximum Junction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type PNP Silicon Epitaxia 2SA1461 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High speed switching: tstg=110ns. High gain bandwidth product: fT=510MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.