The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SMD Type
Silicon PNP Epitaxial 2SA1587
Transistors
Features
High voltage VCEO=-120V High hFE hFE=200 to 700 Low noise Small package
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VEBO VCEO IC IB PC Tj Tstg Rating -120 -120 -5 -100 -20 100 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE VCE (sat) fT Cob NF Testconditons VCB = -120 V, IE = 0 VEB = -5 V, IC = 0 V
2SA1587 Datasheet