Kexin Electronics 2SA1812
PNP Transistors
| Part No. | 2SA1812 |
|---|---|
| Datasheet | 2SA1812 Download |
| Manufacturer | Kexin Electronics |
| Description | PNP Transistors |
| Buy | Stock & Price |
FEATURES
● High breakdown voltage, BVCEO=-400V.● High switching speed, typically tf :1us at IC =-100mA.
●High-voltage Switching Transistor 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Symbol VCBO VCEO VEBO IC ICP Collector Power Dissipation PC Junction Temperature TJ Storage Temperature range Tstg Note.1: When mounted on a 40X40X0.7mm ceramic board.●
ELECTRICAL CHARACTERISTICS
Ta = 25℃ Rating -400 -400 -7 -0.5 -1 0.5 2 150 -55 to 150 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Turn-on time Storage time Fall time Collector output capacitance Transition frequency Symbol Test Conditions VCBO...
