2SA1948 Datasheet | Kexin Semiconductor

Features - Collector Current Capability IC=-0.1A - Collector Emitter Voltage VCEO=-120V - plementary to 2SC5213 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -120 -120 -5 -100 500 150 -55 to 150 Unit V m A m W ℃ Unit:mm 1.Base 2.Collector 3.Emitter - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 m A， RBE=∞ VEBO IE= -100μA， IC=0 ICBO VCB= -100 V , IE=0 IEBO VEB= -4V , IC=0 VCE(sat) IC=-50 m A, IB=-2.5m A VBE(sat) IC=-50 m A, IB=-2.5m A h FE VCE= -10V, IC= -10m A Cob VCB= -20V, IE= 0,f=1MHz f T VCE= -10V, IE= 10m A Min Typ Max Unit -120 -120 -5 -100 -100 n...