2SA2071-Q Datasheet | Kexin Semiconductor

Features - Collector Current Capability IC=-3A - Collector Emitter Voltage VCEO=-60V - High speed switching. - plements the 2SC5824 1.70 0.1 0.42 0.1 0.46 0.1 - Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse Collector Power Dissipation Junction Temperature Storage Temperature range (Note.1) Symbol VCBO VCEO VEBO IC ICP TJ Tstg Rating -60 -60 -6 -3 -6 0.5 2 150 -55 to 150 Note.1:Mounted on a 40×40×0.7 (mm) ceramic substrate - Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Turn-on time Storage time Fall time Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 m A， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -40 V , IE=0 IEBO VEB= -4V , IC=0 VCE(sat) IC=-2 A, IB=-200m A VBE(sat) IC=-2 A, IB=-200m A h FE VCE= -2V, IC= -100m A ton tstg IC= - 3A IB1= - 300m A IB2=300m A...